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NTA7002N, NVTA7002N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
Gate ? to ? Source Leakage Current
Gate ? to ? Source Leakage Current
V (BR)DSS
I DSS
I DSS
I GSS
I GSS
I GSS
V GS = 0 V, I D = 100 m A
V GS = 0 V, V DS = 30 V
V GS = 0 V, V DS = 20 V,
T = 85 ° C
V DS = 0 V, V GS = ± 10 V
V DS = 0 V, V GS = ± 5 V
V DS = 0 V, V GS = ± 5 V
T = 85 ° C
30
1.0
1.0
± 25
± 1.0
± 1.0
V
m A
m A
m A
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
Forward Transconductance
V GS(TH)
R DS(on)
g FS
V DS = V GS , I D = 100 m A
V GS = 4.5 V, I D = 154 mA
V GS = 2.5 V, I D = 154 mA
V DS = 3 V, I D = 154 mA
0.5
1.0
1.4
2.3
80
1.5
7.0
7.5
V
W
mS
CAPACITANCES
Input Capacitance
C ISS
11.5
20
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V DS = 5.0 V, f = 1 MHz,
V GS = 0 V
10
3.5
15
6.0
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
13
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 5.0 V,
I D = 75 mA, R G = 10 W
15
98
60
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 154 mA
0.77
0.9
V
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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